| 摘要 |
A semiconductor memory device has regular memory cells (RC1 - RCm) arranged in rows and columns, and, when one of the regular memory cells in a row is defective, the row is replaced with redundant memory cells (RCr - RCs). A fuse element (34) is then broken so as to isolate the power supply line (BL1/BLn) associated with the row from the main power supply line (GND) so that a defective memory cell does not consume any current, thereby improving the power consumption of the semiconductor memory device, and avoiding the need to reject the device due to large current consumption. <IMAGE> |
