发明名称 |
Insulated gate field effect transistor and method of manufacture thereof |
摘要 |
A method for forming a field effect transistor includes providing a semiconductor substrate having: a gate insulation layer; and, a gate metalization layer disposed on the gate insulation layer, such gate metalization comprising an oxidizable material. A mask is provided over the gate metalization layer, such mask having an aperture therein and masking a region of the gate metalization layer. The mask is subjected to a plasma etch to selectively remove portions of the gate metalization layer exposed by the aperture while leaving unetched the masked region of the gate metalization layer to form a gate for the transistor. An oxidation resistant layer is formed an over the formed gate. The semiconductor substrate is heated with the oxidation resistant layer. Using the gate as a mask, source and drain regions for the transistor are formed. The heating comprises heating to a temperature in the order of 1050 DEG C to anneal the substrate. A field effect transistor includes a silicon substrate; a gate silicon dioxide layer disposed on the substrate; a gate disposed on the gate insulation layer, such gate having an oxidizable material; and an oxidation resistant layer disposed on sidewalls of the oxidizable material of the gate. The oxidizable material comprises an electrically conductive material. <IMAGE> |
申请公布号 |
EP1020922(A3) |
申请公布日期 |
2001.08.08 |
申请号 |
EP19990310309 |
申请日期 |
1999.12.21 |
申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SRINIVASAN, SENTHIL;WEYBRIGHT, MARY;GAMBINO, JEFFREY;RUPP, THOMAS |
分类号 |
H01L29/78;H01L21/265;H01L21/283;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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