发明名称 Semiconductor memory device
摘要 A control circuit portion which controls the operations of memory cells is concentrated in a central portion and heat radiation plates are placed thereon via adhesive. A semiconductor integrated circuit having a function of the MPU or the like is placed above the control circuit portion via a bump electrode. The control circuit portion and a memory block are formed on separate chips respectively.
申请公布号 US6272034(B1) 申请公布日期 2001.08.07
申请号 US20000606402 申请日期 2000.06.29
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 KINOSHITA MITSUYA;MORISHITA FUKASHI;ARIMOTO KAZUTAMI;FUJINO TAKESHI;TANIZAKI TETSUSHI;TSURUDA TAKAHIRO;AMANO TERUHIKO;KOBAYASHI MAKO
分类号 G11C11/401;G11C5/02;H01L27/10;(IPC1-7):G11C5/02 主分类号 G11C11/401
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