发明名称 Photonic bandgap materials based on silicon
摘要 Method of synthesis of photonic band gap (PBG) materials. The synthesis and characterization of high quality, very large scale, face centered cubic photonic band gap (PBG) materials consisting of pure silicon, exhibiting a complete three-dimensional PBG centered on a wavelength of 1.5 mu m. This is obtained by chemical vapor deposition and anchoring of disilane into a self-assembling silica opal template, wetting of a thick silicon layer on the interior surfaces of the template, and subsequent removal of the template. This achievement realizes a long standing goal in photonic materials and opens a new door for complete control of radiative emission from atoms and molecules, light localization and the integration of micron scale photonic devices into a three-dimensional all-optical micro-chip.
申请公布号 AU2821701(A) 申请公布日期 2001.08.07
申请号 AU20010028217 申请日期 2001.01.24
申请人 THE GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTO;UNIVERSIDAD POLITECNICA DE VALENCIA;CONSEJO SUPERIOR DE INVESTIGACIONES CIENTIFICAS;SAJEEV JOHN;EMMANUEL BENJAMIN CHOMSKI 发明人 SAJEEV JOHN;EMMANUEL BENJAMIN CHOMSKI;GEOFFREY ALAN OZIN;CEFERINO LOPEZ FERNANDEZ;FRANCISCO JAVIER MESEGUER RICO
分类号 G02B6/122 主分类号 G02B6/122
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