发明名称 Control mechanisms for dosimetry control in ion implantation systems
摘要 A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion source, an electrode assembly, a platform mounting a workpiece, and a ion beam measuring structure. The ion source in conjunction with the electrode assembly forms an ion beam in the shape of a ribbon beam. The ion beam is formed and directed such that a first portion of the ion beam treats the workpiece while a second portion of the ion beam is contemporaneously measured by the beam measuring structure. A controller obtains data from the beam measuring structure on the ion beam's parameters, and then generates control signals to the ion implantation system in response to the data.
申请公布号 AU1960197(A) 申请公布日期 1997.09.16
申请号 AU19970019601 申请日期 1997.02.14
申请人 EATON CORPORATION 发明人 JULIAN G. BLAKE;PIERO SFERLAZZO;PETER H. ROSE;ADAM A. BRAILOVE
分类号 H01J37/04;C23C14/48;H01J27/14;H01J37/08;H01J37/18;H01J37/30;H01J37/304;H01J37/317;H01L21/00;H01L21/265;H01L21/677;H01L21/683 主分类号 H01J37/04
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