发明名称 Collection devices for plasma immersion ion implantation
摘要 A plasma treatment system (200) for implantation with a novel susceptor with a perforated shield (201) and collection devices (221). The system (200) has a variety of elements such as a chamber in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a silicon substrate, which has a surface. The perforated shield (201) draws ions from the implantation toward and through the shield to improve implant uniformity in the substrate. The collection device accumulates charge that can detrimentally influence the substrate during processing. In a specific embodiment, the chamber has a plurality of substantially planar rf transparent windows (26) on a surface of the chamber. The system (200) also has an rf generator (66) and at least two rf sources in other embodiments.
申请公布号 US6269765(B1) 申请公布日期 2001.08.07
申请号 US19980165231 申请日期 1998.10.01
申请人 SILICON GENESIS CORPORATION 发明人 CHU PAUL K.;CHAN CHUNG
分类号 C23C14/48;C23C14/56;H01J37/32;(IPC1-7):C23C14/48 主分类号 C23C14/48
代理机构 代理人
主权项
地址