| 发明名称 |
MOS transistor with high-K spacer designed for ultra-large-scale integration |
| 摘要 |
A MOS transistor having a source and drain extension that are less than 40 nanometers in thickness to minimize the short channel effect. A gate includes a high-K dielectric spacer layer to create depletion regions in the substrate which form the drain and source extensions.
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| 申请公布号 |
US6271563(B1) |
申请公布日期 |
2001.08.07 |
| 申请号 |
US19980122815 |
申请日期 |
1998.07.27 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YU BIN;LIN MING-REN |
| 分类号 |
H01L21/336;H01L29/423;H01L29/49;(IPC1-7):H01L29/76;H01L29/94;H01L31/062 |
主分类号 |
H01L21/336 |
| 代理机构 |
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