发明名称 |
Single-poly EPROM cell with CMOS compatible programming voltages |
摘要 |
The Frohmann-Bentchkowsky EPROM cell is programmed by utilizing biasing voltages which are sufficient to induce hot punchthrough holes to flow from the source region to the drain region, and insufficient to induce avalanche breakdown at the drain-to-semiconductor material junction. In addition, the Frohmann-Bentchkowsky EPROM cell is programmable with CMOS compatible voltages by forming the physical floating gate length of the cell to be less than the minimum physical gate length of the CMOS devices.
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申请公布号 |
US6271560(B1) |
申请公布日期 |
2001.08.07 |
申请号 |
US19990393617 |
申请日期 |
1999.09.10 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
KALNITSKY ALEXANDER;BERGEMONT ALBERT |
分类号 |
G11C11/56;G11C16/04;G11C16/10;H01L27/115;H01L29/788;(IPC1-7):H01L29/788 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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