SEMICONDUCTOR DEVICE STRUCTURE AND ITS MANUFACTURING METHOD

摘要

PURPOSE: To provide a semiconductor device structure which causes less connection failures to contact plugs without producing defects and contact resistance increase. CONSTITUTION: An N-type high-concentration diffusion layer 2 is selectively formed on a P-type silicon substrate 1, and a silicon oxide film is formed as a first interlayer insulating film 3 on the surface on the diffusion layer 2. A polysilicon plug 4 is arranged on the diffusion layer 2. A silicide pad 5 whose width is larger than that of the polysilicon plug 4 is arranged on the upper edge of the polysilicon plug 4 in a self-aligned manner. A second interlayer insulating film 6 is arranged by covering the first interlayer insulating film 3 and the silicide pad 5, and a tungsten plug 7 is arranged on the silicide pad 5. A wiring 8 of alloy of aluminum and copper is provided on the second interlayer insulating film 6 so as to be connected to the tungsten plug 7.