| 摘要 |
PURPOSE: A method for removing an impurity inside of a semiconductor chamber and an apparatus for removing the impurity are provided to remove impurity particles by using heated chamber and high-temperature gas. CONSTITUTION: The impurity removing method includes following steps. At first, the gas stored in a gas box is passed by a gas heater(21) to produce gases at high temperature. Then, the chamber is directly heated by using a chamber heater(31) provided with a chamber head. At third, the high temperature gas inhaled in the chamber head burns the impurities inside the chamber. At forth, the impurities is drained outside by a pump. At last, the preceding steps are performed repeatedly to remove the impurities in the chamber.
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