| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, that can manufacture the structure of a metal gate electrode/high permittivity gate insulation film/semiconductor, with high yield. SOLUTION: At least one type of first metal or the oxide of the first metal, which selected from a first group that is composed of a metal that becomes a metal oxide for indicating a higher relative permittivity (3.9) than that of at least a silicon thermal oxide film is deposited on a semiconductor substrate or a semiconductor thin film, a second metal that is at least one type of metal which is and a second metal having electronegativity smaller than that of the first metal being selected from a second group that is composed of a transition metal or a precious metal is deposited on the first metal or the first metal oxide, the substrate is treated thermally in the oxidizing atmosphere, and the structure of the metal oxide/semiconductor of the second metal/first is formed.
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