| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of an improved semiconductor device, that prevents contamination from a resist material to a silicon oxide film, reduces defects to the silicon oxide film due to solution treatment, and has small fluctuation in characteristics when forming an insulated-gate semiconductor device with a gate insulation film including silicon oxide films with different film thicknesses. SOLUTION: The silicon oxide film for composing one part of a gate insulating film is formed on the surface of a semiconductor, and a silicon nitride film is formed by a chemical vapor growth method using monosilane and ammonia as a source gas before a resist film is formed on the silicon oxide film for selectively forming a resist film. The silicon nitride film that is not covered with the resist film and the silicon oxide film under the silicon nitride film are removed, the surface of the semiconductor being exposed after the resist film is removed is oxidized for forming a second silicon oxide film with a thickness being different from that of the silicon oxide film, and a gate electrode is formed on the insulating films.
|
