| 摘要 |
PROBLEM TO BE SOLVED: To provide a doped III-V nitride light emitting device. SOLUTION: A semiconductor device is provided, which includes the n-type device layer of III-V nitride having the donor dopant of germanium(Ge), silicon(Si), tin(Sn) and/or oxygen(O), and/or the p-type device layers of III-V nitride having the acceptor dopant of magnesium(Mg), beryllium(Be), zinc(Zn) and/or cadmium(Cd). Both layers simultaneously reinforce distortion or in a doping superlattice, and the semiconductor that has improved conductivity and can emit a long wavelength is provided. |
