METHOD FOR FORMING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE AND CONTACT STRUCTURE MANUFACTURED THEREBY

摘要

PURPOSE: A method for forming a metal interconnection of a semiconductor device and a contact structure manufactured thereby are provided to selectively form a metal film for interconnection inside a groove in a uniform manner and provide a contact structure manufactured by the metal interconnection forming method. CONSTITUTION: An inter-layer dielectric is formed on a semiconductor substrate. A predetermined region of the inter-layer dielectric is etched to form an inter-layer dielectric pattern(105) having a recessed region. A barrier metal film(109) is formed on a front surface of the resultant on which the inter-layer dielectric pattern(105) is formed. A material film(111) is formed on the semiconductor substrate on which the barrier metal film is formed to expose the barrier metal film within the recessed region. An anti-nucleation layer(113) is formed by performing a native oxidation to the material film in vacuum condition. A metal film is formed to fill a region surrounded by the exposed barrier metal film. Before the barrier metal film is formed, a resistant metal layer is formed on the front surface of the resultant on which the inter-layer dielectric pattern is formed.