| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory in which current consumption at the time of initializing fuse information can be reduced without initializing a fuse block in a redundant circuit when the circuit is not used. SOLUTION: This device is provided with a fuse block 46 for specifying an address by selectively cutting off fuses 41-45 by a redundant circuit of a semiconductor memory, latch sections 20B to 20F for generating and holding respective pieces of fuse information in accordance with the existence of energization of fuses 41 to 45 at the time of initialization, a latch section 20A for selecting a redundant circuit for generating fuse information in accordance with the existence of energization of a fuse 40 at the time of memory initializing, holding it and generating a terminal voltage FMS of the fuse 40, and a N type MOS transistor 92 for enabling conduction to each fuse of a fuse block 46 by using the terminal voltage FMS of the latch section 20A.
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