| 摘要 |
1,104,118. Semi-conductor devices. COMPAGNIE GENERALE D'ELECTRICITE. 29 Nov., 1965 [3 Dec., 1964], No. 50657/65. Heading H1K. [Also in Division H3] In a delay device, the input signal is applied to a heating resistor which is thermally connected by respective paths of different thermal capacitances to two sides of a thermoelectric generator which produces the output signal. As shown, a PN thermoelectric device 3, 4 is formed by diffusion in a block 2 of N-type silicon which provides a thermal path of large thermal capacitance from a heating resistor 6 to one side of the thermoelectric device, a low-capacitance path to the other side being provided by a layer 8 of beryllium oxide. A layer 1 of silica protects the upper surface of the silicon block 2. |
