| 发明名称 |
IT FLASH MEMORY RECOVERY SCHEME FOR OVER-ERASURE |
| 摘要 |
A method is provided which uses a uniform electric potential across tunnel oxide, based on a uniform field to allow memory cell recovery from over-erasure.
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| 申请公布号 |
WO0156035(A2) |
申请公布日期 |
2001.08.02 |
| 申请号 |
WO2001EP01034 |
申请日期 |
2001.01.31 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
SHUM, DANNY;TEMPEL, GEORG;LUDWIG, CHRISTOPH |
| 分类号 |
G11C11/56;G11C16/04;G11C16/34;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/56 |
| 代理机构 |
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