SCHOTTKY BARRIER DIODE AND METHOD THEREOF

摘要

PURPOSE: A schottky barrier diode and a method thereof are provided to decrease the voltage drop of the forward bias and not to degrade the characteristic of the reverse break down voltage without enlarging the size by forming a trench in an epitaxial layer. CONSTITUTION: An n-type epitaxial layer(20) is formed on a substrate(10). A trench and a p-type guard ring(30) are formed in the epitaxial layer(20). An insulating layer(40) having an opening is formed on the epitaxial layer(20), and a portion of the guard ring(30) is exposed by the opening. A barrier metal layer(50) is connected with the guard ring(30) and the epitaxial layer(20) through the opening. An anode electrode(60) is formed on the lower side of the substrate(10).