发明名称 OUTPUT DRIVER FOR REDUCING PARASITIC CAPACITANCE OF PAD
摘要 PURPOSE: An output driver for reducing a parasitic capacitance of a pad is provided to reduce parasitic capacitance of the pad connected to an output driver terminal. CONSTITUTION: In an output driver for reducing parasitic capacitance of a pad, transistors for forming an output driver are serial-connected between the pad and a ground terminal. The transistors are formed in a Pwell(8) surrounded with a deep Nwell(4) and a barrier Nwell(6) formed in a semiconductor substrate(2). A plug(12) of the Pwell is connected to a negative bulk voltage terminal. The transistors has the lower threshold voltage than that of a normal transistor formed in the semiconductor substrate. The bulk voltage is a back bias voltage used to prevent leakage current of the memory cell.
申请公布号 KR20010073708(A) 申请公布日期 2001.08.01
申请号 KR20000002488 申请日期 2000.01.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LIM, SEONG MIN
分类号 G11C11/4063;(IPC1-7):G11C11/406 主分类号 G11C11/4063
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