发明名称 |
OUTPUT DRIVER FOR REDUCING PARASITIC CAPACITANCE OF PAD |
摘要 |
PURPOSE: An output driver for reducing a parasitic capacitance of a pad is provided to reduce parasitic capacitance of the pad connected to an output driver terminal. CONSTITUTION: In an output driver for reducing parasitic capacitance of a pad, transistors for forming an output driver are serial-connected between the pad and a ground terminal. The transistors are formed in a Pwell(8) surrounded with a deep Nwell(4) and a barrier Nwell(6) formed in a semiconductor substrate(2). A plug(12) of the Pwell is connected to a negative bulk voltage terminal. The transistors has the lower threshold voltage than that of a normal transistor formed in the semiconductor substrate. The bulk voltage is a back bias voltage used to prevent leakage current of the memory cell.
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申请公布号 |
KR20010073708(A) |
申请公布日期 |
2001.08.01 |
申请号 |
KR20000002488 |
申请日期 |
2000.01.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LIM, SEONG MIN |
分类号 |
G11C11/4063;(IPC1-7):G11C11/406 |
主分类号 |
G11C11/4063 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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