METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to protect an inter-layer dielectric when a hole is formed, and manufacture a semiconductor device having an excellent profile not to deteriorate planarization of the semiconductor device. CONSTITUTION: A pattern is formed on an upper part of a semiconductor substrate. The first inter-layer dielectric(100) is deposited to make flat the upper part of the semiconductor substrate. An interconnection is formed on an upper part of the first inter-layer dielectric. The second inter-layer dielectric(104) is formed on an upper part of the interconnection. The third inter-layer dielectric(106) is formed on an upper part of the second inter-layer dielectric. Polycrystalline silicon is formed by an etching process performed on an upper part of the third inter-layer dielectric and functions as an etch stop layer to prevent a damage of the third inter-layer dielectric. The fourth inter-layer dielectric(110) is formed on an upper part of the polycrystalline silicon film. An aperture is formed by a photographing process and an etching process on the resultant to extend from the fourth inter-layer dielectric to the interconnection. A conductive material is filled in an inside of the hole.