SEMICONDUCTOR DEVICE

摘要

ÄObjectÜ A conventional large capacity DRAM (dynamic random access memory) tends to become unstable in operation because of the low read signal voltage of the memory cell. If the memory cell is provided with a gain to raise the signal voltage, then the memory cell area will increase. Therefore a memory cell stable in operation, small in area and capable of RAM operation is called for. ÄConstitutionÜ For instance, an MOS transistor for holding an information voltage, a write transistor for providing the information voltage (e.g. a tunnel transistor) and a capacitor for controlling the gate voltage may be three-dimensionally structured into a memory cell. ÄEffectÜ An inexpensive semiconductor capable of fast and stable operation can be realized. Furthermore, even a nonvolatile RAM function can be added. <IMAGE>