| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing semiconductor parts. SOLUTION: The method for producing semiconductor parts includes a stage in which a first electrically conductive layer 675 is deposited on a substrate 270, a stage in which a patterned plating mask 673 is formed on the first electrically conductive layer, a stage in which, without piercing the plating mask, a first plating electrode 250 is connected to the first electrically conductive layer and a stage in which the surface of the part of the first electrically conductive layer is plated to form a second electrically conductive layer. The plating device for the above producing method contains an inner weir 220 located at the inside of an outer weir 210, an elastic member 230 on a rim of the outer weir, a pressure ring 240 located on the rim of the outer weir and the elastic member and a plurality of cathode contacts 250, 251, 252 and 253 located between the pressure ring and the outer weir. A substrate is arranged between the elastic member and the pressure ring.
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