| 摘要 |
PROBLEM TO BE SOLVED: To suppress the increase of the threshold voltage of at least an n- channel type MISFET, in the gate electrode created by containing a metal nitride of a high melting point. SOLUTION: In a semiconductor device, a gate electrode 109 of a p-channel type MISFET is created by laminating a tungsten film 107 on a titanium nitride film 106, and a gate electrode 110a of an n-channel type MISFET is created by laminating the tungsten film 107 on a titanium nitride film 106a. In the manufacture of the titanium nitride film 106a, nitrogen ions are implanted into the titanium nitride film 106, and its work function is made small.
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