| 摘要 |
PROBLEM TO BE SOLVED: To prevent variations in electric characteristics of the device, by solving a problem of an easily flowing channel current caused by a decrease in channel density at a boundary part between a channel region and an element isolation region. SOLUTION: A gate electrode 7 in which a central part is partly removed is formed at a boundary part between an element isolation region 3 and a channel region 4. Then, part of channel current flowing along a boundary part between the cannel region and the element isolation region can be controlled on the semiconductor substrate. Then, a variation in electric characteristics can be prevented.
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