| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device composed of 1T1C wherein unevenness is formed on a surface of a memory cell capacity part in order to increase a surface area, while a photolithography process is not added for that purpose so as to take the manufacturing efficiency of the semiconductor device into account. SOLUTION: Parts of an oxide film 5 and parts of a conductor layer 4 under the parts of the oxide film 5 are removed, while the bottom parts of the conductor layer 4 are left with different widths to form spaces C and B. An oxide film 7 is formed over the whole surface so as to fill the spaces C, and side wall etching back is practiced to selectively form parts where the conductor layer 4 is exposed. The conductor layer 4 is etched from the exposed parts. |
