| 摘要 |
A method for the production of a bipolar transistor with an auto-aligned emitter and extrinsic base comprises:- a) the formation on a layer (15) for the formation of the base of the transistor of a pile of a layers of SiGe alloy (16), silicon oxide (17) and silicon nitride (18); b) forming in this layer a false emitter (20); c) forming in the layer (15) for the formation of the base a region of extrinsic base (22) and siliconising this region of extrinsic base; d) covering the region of extrinsic base (22) and the false emitter (20) with a layer of silicon dioxide (24) that is mechanic-chemically polished up to the level of the false emitter (20); e) engraving the false emitter (20) to form a window (25); and f) forming in the window (25) and on the layer of silicon dioxide (24) an emitter of polysilicon (27). |
