| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing semiconductor device, with which increase in the number of processes and the number of masks can be suppressed to a minimum and a high performance bipolar transistor and a high performance MOS transistor can be provided on the same wafer. SOLUTION: A base drawing electrode 105a of an NPN type bipolar transistor and a gate 105b of a PMOS type transistor are simultaneously formed while using the same material (polysilicon film 105) and an emitter drawing electrode 122a of the NPN type bipolar transistor, and a gate 122b of the NMOS type transistor can be simultaneously formed while using the same material (polysilicon film 122). Therefore, a surface channel type PMOS transistor can be provided while suppressing increase in the number of processes. As a result, the leakage current of the PMOS type transistor is decreased and a threshold Vth can be easily controlled.
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