| 摘要 |
PROBLEM TO BE SOLVED: To easily form a resist pattern which widens gradually from a substantial gate electrode pattern forming a stripe toward an umbrella part pattern using a very simple means with respect to a resist pattern forming method, to reduce the parasitic capacity produced between an umbrella part and an operation layer in a T-shape gate electrode and to obtain a field-effect semiconductor device which attains high-frequency high-speed operation. SOLUTION: When an electron beam resist layer 12, which absorbs radiation of 100-500 nm wavelength is formed on an Si wafer 11, at least one resist layer is laminated on the electron beam resist layer 12 and the resist layers are exposed and developed to form a pattern, the electron beam resist layer 12 is subjected to full surface irradiation with a radiation of 100-500 nm wavelength at a stage after the formation of the layer 12 and before the development. |
