| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a MISFET and a manufacturing method for controlling a variation in characteristics by reducing a threshold voltage even when a gate electrode is made of metallic material. SOLUTION: The semiconductor device includes a semiconductor base layer containing a first conductive impurity, and a semiconductor layer 6 formed on the base layer 1 and having a groove. The semiconductor layer 6 has its bottom made of a surface of the base layer 1. The semiconductor device includes an insulating layer that covers the bottom face and the side wall of the groove, and a conductive layer 11 formed in the groove covered with the insulating layer 10. The semiconductor layer 6 has a second conductive impurity of conductivity type opposite to that of the first conductive impurity. The base layer 1 has an impurity diffusion layer 7 formed in a surface region and containing second conductive impurity with density lower than the semiconductor layer 6. In this case, a pattern formed by the semiconductor layer 6 including the groove and a pattern formed by the impurity diffusion layer 7 are the same.
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