| 摘要 |
PURPOSE: A fabrication method of a storage electrode of capacitors is provided to enhance a capacitance by increasing an effective surface area of a porous polysilicon. CONSTITUTION: After forming an interlayer dielectric(7) on a silicon substrate(1) having transistors, contact holes are formed by selectively etching the interlayer dielectric(7). An in-situ phosphorus doped polysilicon layer(9) having cap structure is thickly deposited on the resultant structure. After forming a CVD oxide spacer at both sidewalls of the cap-shaped phosphorus doped polysilicon layer(9), an oxide doped polysilicon layer is deposited on the resultant structure. After forming an oxide doped polysilicon spacer at both sidewalls of the oxide doped polysilicon layer, the oxide doped polysilicon spacer is crystallized by annealing, so that SiO2 or SiOx deposits are generated between the crystallized polysilicon grains. By removing the deposits, a cylindrical storage electrode(20) including a porous polysilicon(11B) is formed.
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