| 摘要 |
A semiconductor device has semiconductor substrate covered with an insulating layer; a multilayer wiring structure buried in the insulating layer; and at least one pad electrode connected to the multilayer wiring. The pad electrode is covered with a protective layer having at least one opening exposing the surface of the pad electrode. A semiconductor device comprises semiconductor substrate (1); an insulating layer (2,7,10,14,18,22); a multilayer wiring structure buried in the insulating layer; at least one pad electrode (26) connected to the multilayer wiring; and a protective layer (27) covering the pad electrode and has at least one opening (29) exposing the surface of the pad electrode. The wiring structure comprises multilayer wiring film (9,13,17,21,25) and at least one via hole (8,11,15,19,23) for connecting the wiring film layers. A surface of the insulating layer contacts with a metal layer consisting of precious metal and alloys containing precious metal. Independent claims are also included for: (1) a method for fabricating the above semiconductor device comprising subsequently forming a multilayer wiring structure on a substrate, at least one pad electrode, an insulating layer, at least one opening on the insulating layer, and an oxidation-preventive layer; and (2) a chemical mechanical polishing apparatus for polishing metal layer comprising mechanisms for polishing the metal layer for dressing an abrasive cloth using a chemical corrosive, and for conditioning the abrasive cloth. |
