发明名称 Production of a trench capacitor comprises filling a trench with a filler, forming an insulating collar, removing the filler, forming a trenched plate using low pressure gas phase doping, etc.
摘要 Production of a trench capacitor comprises forming a trench (108) in a substrate (101); filling a lower region of the trench with a first filler (152); forming an insulating collar in an upper region of the trench; removing the first filler; forming a trenched plate (165) in the substrate in the surrounding of the lower region of the trench as first capacitor plate using low pressure gas phase doping; forming a dielectric layer to line the lower region of the trench and the inner side of the collar as capacitor dielectric and filling the trench with a conducting second filler as second capacitor plate. Preferred Features: Formation of the trenched plate uses AsH3 or PH3 as doping gas and H2 or He as carrier gas.
申请公布号 DE10014920(C1) 申请公布日期 2001.07.26
申请号 DE20001014920 申请日期 2000.03.17
申请人 INFINEON TECHNOLOGIES AG 发明人 HAUPT, MORITZ;SACHSE, JENS-UWE;BECKMANN, GUSTAV;LAMPRECHT, ALEXANDRA;OTTENWAELDER, DIETMAR;KRASEMANN, ANKE;SCHREMS, MARTIN
分类号 H01L21/223;H01L21/8242;(IPC1-7):H01L21/824 主分类号 H01L21/223
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