发明名称 |
Production of a trench capacitor comprises filling a trench with a filler, forming an insulating collar, removing the filler, forming a trenched plate using low pressure gas phase doping, etc. |
摘要 |
Production of a trench capacitor comprises forming a trench (108) in a substrate (101); filling a lower region of the trench with a first filler (152); forming an insulating collar in an upper region of the trench; removing the first filler; forming a trenched plate (165) in the substrate in the surrounding of the lower region of the trench as first capacitor plate using low pressure gas phase doping; forming a dielectric layer to line the lower region of the trench and the inner side of the collar as capacitor dielectric and filling the trench with a conducting second filler as second capacitor plate. Preferred Features: Formation of the trenched plate uses AsH3 or PH3 as doping gas and H2 or He as carrier gas.
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申请公布号 |
DE10014920(C1) |
申请公布日期 |
2001.07.26 |
申请号 |
DE20001014920 |
申请日期 |
2000.03.17 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
HAUPT, MORITZ;SACHSE, JENS-UWE;BECKMANN, GUSTAV;LAMPRECHT, ALEXANDRA;OTTENWAELDER, DIETMAR;KRASEMANN, ANKE;SCHREMS, MARTIN |
分类号 |
H01L21/223;H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/223 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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