| 摘要 |
An LDMOS transistor formed in an N-type substrate. A polysilicon gate is formed atop the N-type substrate. A P-type well is formed in the N-type substrate extending from the source side to under the polysilicon gate. A N+source region is formed in the P-type well and adjacent to the polysilicon gate. A N+drain region is formed in the N-type substrate and in the drain side of the polysilicon gate. Finally, an N-type drift region is formed between the N+drain region and the polysilicon gate, wherein the N-type drift region does not extend to said polysilicon gate.
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