| 摘要 |
PURPOSE: A fabrication method of MOS(Metal Oxide Semiconductor) transistors is provided to prevent a GILD(Gate Induced Drain Leakage), a punch-through and a hot carrier by forming dual insulating spacers. CONSTITUTION: After forming a field oxide on a semiconductor substrate, a step-shaped active region is formed by selectively removing the field oxide. A first insulating layer is formed on the gate formation region. A first insulating spacer(6) is formed at both sidewalls of the first insulating layer. After removing the first insulating layer, a gate insulating layer(7) and a gate electrode(8a) are sequentially formed on the gate formation region and the first insulating spacer(6). After forming an LDD(Lightly Doped Drain) region in the semiconductor substrate, a second insulating spacer is formed at both sidewalls of the gate insulating layer(7) and the gate electrode(8a). Then, heavily doped source and drain regions are formed by using the gate electrode(8a) and the second insulating spacer as a mask.
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