| 摘要 |
PURPOSE: A barrier spike is provided to prevent diffusion of dopants into another layer without having to form a p-n junction in the layer. CONSTITUTION: The barrier spike for preventing diffusion are, for example, Al or an aluminum-containing material, such as AlAs and have a thickness of the order of 1 nm. The spikes can be used to stop dopant diffusion out of a doped layer, in a variety of III-V semiconductor structures, such as InP-based PIN devices.
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