| 摘要 |
PURPOSE: To provide a semiconductor memory in which replacement relief can be performed using only a fuse programming a defective address. CONSTITUTION: A semiconductor memory is provided with replacement program circuits 1, 10. The replacement program circuit 1 is composed of program circuits 2#0-2#5 programming a defective address. The replacement program circuit 10 comprises program circuit 12#0-12#5 programming a defective address. A signal b63 out of output b0-b63 of the replacement program circuit 1 and a signal c0 out of output c0-c63 of the replacement program circuit 10 are used as as signal indicating whether replacement is to be performed or not. A word line cannot being relieved by the replacement program circuit 1 is relieved by using a signal b0.
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