| 摘要 |
PURPOSE: To provide a semiconductor static memory of which the pre-charge operation is fast and chip area is small. CONSTITUTION: In a SRAM, a PCEQH circuit 4 is arranged in a memory cell array (region A) as a first pre-charge section, and a PCEQ circuit 1 is arranged at a border region of a memory cell array as a second pre-charge section. As the PCEQH circuit 4 requires no dummy cell 2 surrounding it by having the same shape as a memory cell 3, chip area can be reduced. The PCEQH circuit 1 can obtain the large degree of freedom for circuit design comparing with the PCEQH circuit 4 by suppressing micro-loading effect by a dummy cell, the circuit characteristics of pre-charge operation can be made good easily.
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