发明名称 SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: A semiconductor substrate and a method for manufacturing the same are provided to suppress the adhesion of particle and easily perform marking process. CONSTITUTION: In the semiconductor substrate having a semiconductor layer which is provided on the upper side with an insulation layer interposed, a mark(4) is formed in an area other than the surface area of the semiconductor layer. Specifically, a first substrate is prepared, and a mark is formed in the peripheral part of a second substrate, and then the first and second substrates are adhered with each other in such a manner that the marked parts are not adhered, and the unnecessary part of the first substrate is removed, thereby moving a moving layer of the first substrate to form an SOI substrate.
申请公布号 KR20010070456(A) 申请公布日期 2001.07.25
申请号 KR20010000860 申请日期 2001.01.06
申请人 CANON KABUSHIKI KAISHA 发明人 SAKAGUCHI KIYOFUMI
分类号 H01L21/20;H01L23/544;(IPC1-7):H01L21/20 主分类号 H01L21/20
代理机构 代理人
主权项
地址