| 摘要 |
PURPOSE: A method of manufacturing ferroelectronic semiconductor memory is provided to protect the intrusion of hydrogen for a memory capacitor using ferroelectric or paraelectric material. CONSTITUTION: A switching resistor(2) is formed on a semiconductor substrate(1), an isolation layer(4) is deposited on the switching transistor(2), and then a memory capacitor provided with a lower electrode(7) formed of platinum and a ferroelectric or paraelectric(8) is formed on the isolation layer. In order to protect the dielectric against intrusion of hydrogen in following manufacturing processes, a first barrier layer(5) is embedded in the isolation layer(4) and, after formation of the memory capacity, a second barrier layer(10) connected to the first barrier layer(5) is deposited.
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