| 摘要 |
A nonvolatile ferromagnetic RAM device and method that is capable of reading the data stored in each magnet quickly and efficiently utilizing a minimal number of components. Specifically, there is a nonvolatile ferromagnetic RAM which is capable of reading the data stored in each magnetic bit. Specifically, there is a ferromagnetic memory cell, comprising a bit (3), made of a ferromagnetic material, having a remnant polarity. A write line (2), located proximate the bit, is coupled to receive: 1) a first current sufficient to create the remnant polarity, and 2) a pulsed second current, insufficient to create any remnant polarity, but sufficient to potentially fluctuate the remnant polarity during the second current pulse. A sense line (1), positioned proximate the bit (3), has the purpose of detecting any potentially created remnant polarity fluctuation.
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