| 摘要 |
A method of fabricating a semiconductor device with various thicknesses of the gate oxide layers is described, which method is applicable to a substrate having a first region and a second region, wherein the first region has a first conductive layer to isolate the first gate oxide layer from the substrate. Thereafter, a first oxide layer/nitride layer is formed on the first conductive layer, followed by forming a doped polysilicon layer on the first oxide layer/nitride layer, wherein the doped polysilicon layer is not formed in the second region. Subsequently, a second gate oxide layer is formed on the substrate of the second region, whereas a first oxide layer/nitride layer/second oxide layer is concurrently converted from the oxide layer/nitride layer/doped polysilicon layer. A defined second conductive layer is then formed on the first oxide layer/nitride layer/second oxide layer and the second gate oxide layer.
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