发明名称 |
Semiconductor memory with non-volatile two-transistor memory cells |
摘要 |
The invention relates to a semiconductor memory having a non-volatile two-transistor memory cell which has an N-channel selection transistor and an N-channel memory transistor. The drive circuitry for the cell includes a P-channel transfer transistor. A transfer channel is connected to a row line leading to the memory cell. This enables the voltages required for programming to be obtained with relatively little technological complexity.
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申请公布号 |
US6266274(B1) |
申请公布日期 |
2001.07.24 |
申请号 |
US20000483734 |
申请日期 |
2000.01.14 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
POCKRANDT WOLFGANG;SEDLAK HOLGER;VIEHMANN HANS-HEINRICH |
分类号 |
G11C16/04;G11C16/06;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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