| 摘要 |
The invention concerns a cathode pulverization target characterized in that its active part, i.e. the volume of the target capable of being removed during the cathode pulverization, consists of a high purity aluminum alloy simultaneously containing copper and iron and having simultaneously a recrystallization temperature well above 20° C. and an electric resistivity less than 2.85 muOMEGA.cm at 20° C. The use of the target for making bonding circuits reduces the frequency at which voids and hillocks appear, while maintaining the resistance of the bonding circuits at values comparable to the resistance obtained with a high purity aluminum alloy, while also providing the etching characteristics comparable to those of high purity aluminum alloy.
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