| 发明名称 |
Integrated circuit having double bottom anti-reflective coating layer |
| 摘要 |
A fabrication method reduces the amount of discoloration on interlevel dielectric layers due to anti-reflective coatings (ARC). The invention utilizes a barrier layer, such as, silicon nitride (SiN) that prevents the anti-reflective coating from contacting the interlevel dielectric layer (ILD0). The anti-reflective coating can be silicon oxynitride (SiON) deposited by LPCVD or PECVD.
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| 申请公布号 |
US6265294(B1) |
申请公布日期 |
2001.07.24 |
| 申请号 |
US19990373084 |
申请日期 |
1999.08.12 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PARK STEPHEN KEETAI;MORALES GUARIONEX;RANGARAJAN BHARATH;SHIELDS JEFF |
| 分类号 |
H01L21/027;H01L21/311;H01L21/314;H01L21/768;H01L23/532;(IPC1-7):H01L21/425;H01L21/76;H01L21/476;H01L21/461;H01L21/31 |
主分类号 |
H01L21/027 |
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