发明名称 Method for producing semiconductor devices
摘要 Disclosed is a method for producing semiconductor devices by using a lithography technique. Process control marks, which are necessary for overlay exposure and so on, are formed, prior to formation of bonding pads, in a photolithography step on bonding pad areas intended to be finally used as continuity areas for deriving external wiring or on areas in the vicinity thereof. The process control marks are formed on the bonding pad areas having a much broader superficial content than scribe line areas. Therefore, even if the number of process control marks to be used increases, or if the marks themselves become large, all of the marks can be formed without using the scribe line areas.
申请公布号 US6265119(B1) 申请公布日期 2001.07.24
申请号 US19970942486 申请日期 1997.10.02
申请人 NIKON CORPORATION 发明人 MAGOME NOBUTAKA
分类号 G03F9/00;G03F7/20;H01L21/027;(IPC1-7):G03F9/00 主分类号 G03F9/00
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