| 摘要 |
A method of manufacturing a semiconductor device in which a groove is not formed at edges of a trench isolation region is provided. The semiconductor device includes an active region and a trench isolation region formed on a semiconductor substrate. The trench isolation region is comprised of a side wall insulation layer which is a thermal oxide, an exposure prevention layer which is a high temperature oxide, and an insulator burial layer which is a low temperature oxide. The densified exposure prevention layer is formed between the side wall insulation layer and the insulator burial layer, thereby preventing a groove exposing the surface of the semiconductor substrate from being formed between the active region where a gate electrode is formed and the trench isolation region. Therefore, when a voltage less than a threshold voltage is applied to the gate electrode, a channel is not formed under the gate electrode, thereby preventing current flow.
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