METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to reduce the number of a fuse formation process by forming a structure for preventing a short-circuit between conductive bodies around a fuse. CONSTITUTION: A guard ring(31) is formed on a field insulating layer(30) of an EEPROM(Electrically Erazable Programmable Read Only Memory) by using the first polysilicon layer. A dielectric layer(33) is formed on the guard ring(31). The dielectric layer(33) is formed with an ONO(Oxide Nitride Oxide) layer or a silicon oxide layer. The second polysilicon layer is formed thereon. A fuse(35) is formed by patterning the second polysilicon layer and the dielectric layer(33). The fuse(35) is formed apart from the guard ring(31).