发明名称 UNIFORM RECESS DEPTH OF RECESSED RESIST LAYERS IN TRENCH STRUCTURES
摘要 A method for forming uniform-depth recesses across areas of different trench density, in accordance with the present invention, includes providing a substrate having trenches formed therein. The substrate includes regions of different trench density. The trenches are filled with a first filler material, and the first filler material is removed from a surface of the substrate. A second filler material is formed over the surface of the substrate such that the depth of the second filler material is substantially uniform across the regions of different trench density. Recesses are formed in the trenches such that the recess depth below the surface of the substrate is substantially uniform across the regions of different trench density.
申请公布号 WO0152321(A2) 申请公布日期 2001.07.19
申请号 WO2001US00827 申请日期 2001.01.11
申请人 INFINEON TECHNOLOGIES NORTH AMERICA CORP. 发明人 WOHLFAHRT, JOERG
分类号 H01L21/762;H01L21/763;H01L21/8242;(IPC1-7):H01L21/762;H01L21/824 主分类号 H01L21/762
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