发明名称 PHOTOELECTRIC TRANSDUCER, ITS MANUFACTURING METHOD AND POROUS TITANIUM OXIDE SEMICONDUCTOR ELECTRODE
摘要 PROBLEM TO BE SOLVED: To provide a photoelectric transducer of higher photoelectric conversion efficiency and its manufacturing method compared with that of a traditional photoelectric transducer, and provide a porous titanium oxide semiconductor electrode. SOLUTION: 1. The photoelectric transducer is composed of the porous titanium oxide semiconductor electrode, a pigment which is adsorbed on the surface of the electrode, an electrolyte 5 having a redox pair and a counter electrode 6. The titanium oxide constituting porous titanium oxide semiconductor electrode 3 is a mixture of at least two kinds particles having different average primary particle sizes. 2. This is a manufacturing method of photoelectric transducer in which an application solution is prepared by mixing at least two kinds of particles having different average primary particle sizes so that the distribution of primary particle size of titanium oxide constituting porous titanium oxide semiconductor electrode has two local maximums, and after the coating solution is coated on the base board, it is baked and the porous titanium oxide thin film is prepared. 3. This is the porous titanium oxide semiconductor electrode for the photoelectric transducer constituted by including the mixture of two kinds of particles having different average primary particle sizes.
申请公布号 JP2001196104(A) 申请公布日期 2001.07.19
申请号 JP20000001950 申请日期 2000.01.07
申请人 RICOH CO LTD 发明人 YANAGISAWA MASAHIRO
分类号 H01L31/04;H01G9/20;H01M14/00 主分类号 H01L31/04
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