| 摘要 |
PROBLEM TO BE SOLVED: To offer a dielectric thick film for an inorganic EL which can grow into a large area at low cost without using expensive substrates such as quartz, and further has a high reactivity not containing detrimental lead, and to provide an inorganic EL element. SOLUTION: The dielectric thick film for an inorganic EL formed on the substrate, comprises a dielectric material which has two or more phase change points between room temperature and thick-film formation temperature. An inorganic EL element using this film is also provided.
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